教授 博士研究生导师
专业：微电子学、物理电子学、电子信息
研究方向： GaN激光器、 MOCVD 技术、GaN基材料与芯片
◆ 教育经历：
1994-1998武汉理工大学 学士 专业：材料学
1998-2001武汉理工大学 硕士 专业：材料学
2001-2004中国科学院半导体研究所 博士 专业：微电子与固体电子学
◆ 人才项目及获奖：
1. 国家级人才计划入选者
2. 江苏省“333高层次人才培养工程”第三层次培养对象（中青年学术技术带头人）
3. 江苏省高功率半导体激光人才攻关联合体核心成员--省部级奖励
4. 中国质量协会质量技术一等奖
5. 福建省自然科学三等奖
6. 苏州市姑苏创新创业领军人才
7. 苏州高新区狮山科技创新创业领军人才
◆ 学术兼职：
1. 国际电工委员会电子显示技术委员会 专家
2. 国家重点研发计划评审 专家
3. 全国平板显示器件标委会激光显示器件分技术委员会 委员
4. Interdisciplinary Materials 编委
5. 人工晶体学报 编委
◆ 代表性科研项目：
1. 2024-2027“GaN基激光器XXX”国家科技重大专项项目 主持
2. 2016-2021“面向激光显示的绿色半导体激光器（LD）关键材料与技术研究”国家重点研发计划 主持
3. 2019-2023“大功率氮化镓绿光激光器的材料生长与物理机制”国家自然科学基金重点项目 主持
4. 2022-2025“GaN基ZZZ芯片研究”XXX-基础加强 主持
5. 主持其他省部级项目近10项
◆ 代表性科研论文：
1. Greatly suppressed potential inhomogeneity and performance improvement of c-plane InGaN green laser diodes, Aiqin Tian, Lei Hu, Xuan Li, Si Wu, Peng Xu, Dan Wang, Ren lin Zhou, Binglei Guo, Fangzhi Li, Wei Zhou, Deyao Li, Masao Ikeda, Hui Yang and Jianping Liu*, Science China Materials, 2020, 65(2): 543
2. High-power hybrid GaN-based green laser diodes with ITO cladding layer, Lei Hu, Xiaoyu Ren, Jianping Liu*, Aiqin Tian, Lingrong Jiang, Siyi Huang, Wei Zhou, Liqun Zhang and Hui Yang, Photonics Research, 2020, 8(3): 279
3. Design and growth of GaN-based blue and green laser diodes, Aiqin Tian, Lei Hu, Liqun Zhang, Jianping Liu* and Hui Yang, Science China Materials, 2020, 63(8): 1
4. Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity, Tao Yang, Yan Hui Chen, Ya Chao Wang, Wei Ou, LeiYing Ying, Yang Mei, AiQin Tian, Jianping Liu*, HaoChung Guo, Bao-Ping Zhang, Nano-Micro Lett, 2023,2023(15): 223
5. GaN-based blue laser diodes with output power of 5W and lifetime over 20000h aged at 60 °C, Lei Hu, Siyi Huang, Zhi Liu, Tengfeng Duan, Si Wu, Dan Wang, Hui Yang, Jun Wang, and Jianping Liu*, 2025, 46(1): 040501
6. Suppression of substrate mode in GaN-based green laser diodes, Linrong Jiang, Jianping Liu*, Liqun Zhang, Bocang Qiu, Aiqin Tian, Lei Hu, Deyao Li, Siyi Huang, Wei Zhou, Masao Ikeda and Hui Yang, Optics Express, 2020, 28(10), 15497-15504
7. 连续工作7.5 W 高功率氮化镓基蓝光激光器（特邀），胡磊，李德尧，刘建平，田爱琴，王旦，张涛，吴思，徐鹏，杨辉，光子学报，51(2):0251209
8. Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region, Aiqin Tian, Jianping Liu*, Liqun Zhang, Zengcheng Li, Masao Ikeda, Shuming Zhang, Deyao Li, Pengyan Wen, Feng Zhang, Yang Cheng, Xiaowang Fan and Hui Yang, Optics Express, 2017, 25(1): 415-421
9. Significant increase of quantum efficiency of green InGaN quantum well by realizing step-flow growth, Aiqin Tian, Jianping Liu*, Liqun Zhang, Lingrong Jiang, Masao Ikeda, Shuming Zhang, Deyao Li, Pengyan Wen, Yang Cheng, Xiaowang Fan, and Hui Yang, Appl. Phys. Lett., 2017, 111(11), 112102
10. Realization of InGaN laser diodes above 500 nm by growth optimization of the
11. InGaN/GaN active region, Jianping Liu*, Zengcheng Li, Liqun Zhang, Feng Zhang, Aiqing Tian, Kun Zhou, Deyao Li, Shuming Zhang, and Hui Yang, Applied Physics Express, 2014, 7, 111001
12. Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth, Zengcheng Li, Jianping Liu*, Meixin Feng, Kun Zhou, Shuming Zhang, Hui Wang, Deyao Li, Liqun Zhang, Degang Zhao, Desheng Jiang, Huaibing Wang, and Hui Yang, Appl. Phys. Lett. 103, 2013, 152109
13. Conductivity enhancement in AlGaN:Mg by suppressing the incorporation of carbon impurity, Aiqin Tian, Jianping Liu*, Masao Ikeda, Shuming Zhang, Zengcheng Li, Meixin Feng, Kun Zhou, Deyao Li, Liqun Zhang, Pengyan Wen, Feng Zhang, and Hui Yang, Applied Physics Express, 2015, 8(5), 051001
14. Barrier effect on hole transport and carrier distribution in InGaN/GaN multiple quantum well visible light-emitting diodes, J. P. Liu, J.-H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, H. B. Wang, Appl. Phys. Lett. 92，021102 (2008)
